2026 International Conference on Solid State Devices and Materials
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Session Details

Short Oral Presentation04: Power / High‐speed Devices and Materials

[SO-PS-04]Area 4 Short Presentation

Wed. Sep 16, 2026 1:30 PM - 2:02 PM JST
Wed. Sep 16, 2026 4:30 AM - 5:02 AM UTC
Room G(103, 1st Floor)
Session Chair:Katsuhiro Kutsuki(Toyota Central R&D Labs., Inc.), Tomoya Ono(Kobe Univ.)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-04-01]Enhancement-Mode Recessed-Gate InAlGaN/GaN HEMTs with HfAlO Gate Dielectric and Gate Field Plate

〇Chung-Che Shen1, Yi-Hsuan Chang1, Yan-Kuei Wu1, Wei-Chou Hsu1,2 (1. Inst. of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ. (Taiwan), 2. Academy of Innovative Semiconductor and Sustainable Manufac., National Cheng Kung Univ. (Taiwan))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-04-02]Enhanced Channel Conduction in Normally-Off AlGaN/GaN HEMTs Using an MIS-Integrated Dual p-GaN Gate

Yue-ming Hsin1, Yan-Ji Chen1, 〇Kun Chun Wu1, Krishna Sai Sriramadasu1, Yi-Nan Wang1 (1. National Central university (Taiwan))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-04-03]Fin Geometry Effects on Device Characteristics in Wide-Width 30V HV FinFETs for 3D NAND Periphery

〇Sohyeon LEE1,2, Jimyoung LEE1,2, Jongwook Jeon1 (1. Sungkyunkwan Univ. (Korea), 2. Samsung Electronics (Korea))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-04-04]β-Ga2O3 Heterostructure Lateral Schottky Diode Fabricated via Mist-CVD

〇Kai-Ting Chang1, Hao-Chun Hung2, Chia-Cheng Hsu2, Rong-Ming Ko2, Wei-Chou Hsu2 (1. National Cheng Kung Univ. Inst. of Microelectronics Eng. (Taiwan), 2. National Cheng Kung Univ. Academy of Innovative Semiconductor and Sustainable Manufac. (Taiwan))
1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-04-05]Enhancement-Mode InAlN/GaN MIS-HEMTs Enabled by a HfO2-Based Plasma-Induced-Oxidation Charge-Trapping Layer

〇Peiran Wang1, Ziyang Wang1, Shoucheng Xu1, Wenchuan Tao1, Nick Tao2, Hongyu Yu3, Qing Wang1 (1. Southern University of Science and Technology (China), 2. Maxscend Microelectronics Co., Ltd. (China), 3. School of Integrated Circuit, Shenzhen Polytechnic University (China))
1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-04-06]Measurement and Simulation of Hot Carrier Effects Induced Degradations in 1200 V Silicon Carbide Power MOSFETS under Direct Current Stress

〇Wenkai Li1, Shilong Dai1, Guowei Ma1, Yidan Tang2, Pengying Chang1 (1. Beijing Univ. of Technology (China), 2. Inst. of Microelectronics of the Chinese Academy of Sciences (China))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-04-07]Interface state densities near the conduction and valence band edges in SiC/SiO2 structures formed with nitridation process

〇Shuya Hiraiwa1, Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto University (Japan))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-04-08]TCAD-Assisted Separation of Low-Dose Enhancement and High-Dose Degradation Mechanisms in Proton-Irradiated GaN HEMTs

〇Yi-Lun Huang1, Shao-Chun Huang1, Chao-Hsin Wu1 (1. National Taiwan University (Taiwan))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-04-09]Revealing RF Performance Trade-Offs via T-Gate Optimization in n+-GaN Regrown-Contact AlGaN/GaN HEMTs

〇Kun-Yang Jhang1, Ren-Hong Zhang1, Yi-Lun Huang1, Po-Yu Tseng1, Chao-Hsin Wu1 (1. National Taiwan Univ. (Taiwan))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-04-10]Measurement and Physics-Based Analysis of the Forward Gate Current in Schottky-Gate AlGaN/AlN/GaN HEMTs

〇Ismaël Charlet1, Fanny Morisot1, Yveline Gobil1, Arnaud Anotta1, Erwan Morvan1 (1. CEA-Leti (France))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-04-11]Vertical-Type Ohmic Contacts for Diamond Power Devices

〇Shunsuke Shoji1,2, Kosuke Ota1, Nobutaka Oi1, Ryo Yoshida1,2, Akihiko Watanabe3, Ichiro Omura3, Kenji Ueda2, Tatsuya Fujishima1 (1. Power Diamond Systems (Japan), 2. Waseda University (Japan), 3. Kyushu Institute of Technology (Japan))
1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-04-12]Electrical Characteristics of Nitrogen-Doped Current Blocking Layer for Vertical Diamond MOSFETs

〇Ryo Yoshida1,2, Nobutaka Oi1, Shunsuke Shoji1,2, Akihiko Watanabe3, Ichiro Omura3, Kenji Ueda2, Tatsuya Fujishima1 (1. Power Diamond Systems Inc. (Japan), 2. Waseda Univ. (Japan), 3. Kyushu Inst. of Tech. (Japan))
1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-04-13]Contact Field Plate Length Engineering for Mitigating Hot-Carrier-Induced Drain Current Degradation in n-Type LDMOS Devices

〇JIA - QIU1, QIANWEN - GUO1, RAN - TAO1,2, DAWEI - GAO1,2, KAI - XU1,2, JUNKANG - LI1,2, RUI - ZHANG1,2 (1. Zhejiang Univ. (China), 2. ZJU-Hangzhou Global Sci. and Tech. Innovation Center (China))
1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-04-14]Mobility Preservation and Degradation Governed by Recess Depth in Recessed Gate Al2O3/AlGaN/GaN MIS-HEMTs

〇Shundai Yamao1, Kishi Sekiyama1, Suguru Terai1, Masaki Ishiguro1, Ali Baratov1, Naeemul Islam1, Masaaki Kuzuhara2, Susumu Yonezawa1, Joel Tacla Asubar1 (1. The Univ. of Fukui (Japan), 2. The Osaka Gakuin Univ. (Japan))
1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-04-15]High-Performance Insulating Epitaxy on Secondary n-SiC Substrates for RF Applications

〇Tsung Ming Chao1, Hsia yu Chen1, Lung Hsing Hsu2, Yu Yun Lin3, J Andrew Yeh1 (1. National Tsing Hua University (Taiwan), 2. Taiwan Semiconductor Research Institute (TSRI) (Taiwan), 3. National Cheng Kung University (Taiwan))
2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-04-16]Comparative Analysis of Abnormal Degradation Mechanisms in 4H-SiC JMOS and VDMOS under Repetitive Avalanche Stress across Various Temperatures

〇YI-PIN LEE1, Kung-Yen Lee1, Yan-Yu Wen1, Jung-Chieh Chen1, Chun-Wei Yeh1, Tien-Chin Shih1, Eugene Lin2, Aaron Chung2 (1. National Taiwan Univ. (Taiwan), 2. Chroma ATE Inc. (Taiwan))
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