[SO-PS-04] Area 4 Short Presentation

1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-04-13] Contact Field Plate Length Engineering for Mitigating Hot-Carrier-Induced Drain Current Degradation in n-Type LDMOS Devices

〇JIA - QIU¹, QIANWEN - GUO¹, RAN - TAO^1,2, DAWEI - GAO^1,2, KAI - XU^1,2, JUNKANG - LI^1,2, RUI - ZHANG^1,2 (1. Zhejiang Univ. (China), 2. ZJU-Hangzhou Global Sci. and Tech. Innovation Center (China))