Presentation Information

[SO-PS-04-14]Mobility Preservation and Degradation Governed by Recess Depth in Recessed Gate Al2O3/AlGaN/GaN MIS-HEMTs

〇Shundai Yamao1, Kishi Sekiyama1, Suguru Terai1, Masaki Ishiguro1, Ali Baratov1, Naeemul Islam1, Masaaki Kuzuhara2, Susumu Yonezawa1, Joel Tacla Asubar1 (1. The Univ. of Fukui (Japan), 2. The Osaka Gakuin Univ. (Japan))