[SO-PS-04] Area 4 Short Presentation

2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-04-17] Physical Origin and Suppression of Geometric Components in Charge Pumping of 4H-SiC nMOSFETs

〇Shuto Oi¹,Mitsuru Sometani²,Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1. Toyama Prefectural Univ. (Japan)、2. National Inst. of Advanced Industrial Science and Technology (AIST) (Japan))