Presentation Information
[SO-PS-10-06]Crystal Indium Oxide FET with High Mobility and Excellent Reliability Characteristics
〇Nozomi Kamata1, Chihiro Inagaki1, Ryosuke Motoyoshi1, Taichi Ebihara1, Kazuma Furutani1, Takanori Matsuzaki1, Sachiaki Tezuka1, Tsutomu Murakawa1, Kazuya Sugimoto1, Kota Shinnoki1, Hiromichi Godo1, Kenichi Okazaki1, Shunpei Yamazaki1 (1. Semiconductor Energy Laboratory CO., LTD. (Japan))
