Session Details
[SO-PS-10]10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
Wed. Sep 16, 2026 1:30 PM - 1:56 PM JST
Wed. Sep 16, 2026 4:30 AM - 4:56 AM UTC
Wed. Sep 16, 2026 4:30 AM - 4:56 AM UTC
Room F(102, 1st Floor)
Session Chair:Ryo Matsumura(NIMS), Toshiya Murakami(KIOXIA)
[SO-PS-10-01]Fabrication and Evaluation of a Proton-Gated Field-Effect Transistor Using a Nafion Electrolyte / β-MoO3 Single-Crystal Thin Film
〇Yuto Kanbayashi1, Sena Yamamoto1, Shoki Mizukami1, Yuichi Hirofuji1, Nobuya Hiroshiba1, Kazuto Koike1 (1. Osaka Inst. of Tech. (Japan))
[SO-PS-10-02]Carrier Transport Properties in Strongly Correlated Electron System/Semiconductor Heterojunctions Using LaVO3/n-Si Junctions
〇Kaito Fujitani1, Koji Iwasaki1, Ryosuke Takagi1, Yasushi Hotta1 (1. Univ. of Hyogo (Japan))
[SO-PS-10-03]Heterointerface Engineered Tri-Layer Versatile Memristor for Integrated Neuromorphic Functions
〇Chanmin Hwang1, Hee-Dong Kim1 (1. Sejong Univ. (Korea))
[SO-PS-10-04]First-Principles Study on Hydrogen Gas Sensing Mechanism of Single-Atom Pt-Decorated Oxygen-Deficient ZnO Surfaces
〇Cheng-Chuan Chou1, Chia-Hsu Hsieh1 (1. Natl. Sun Yat-sen Univ. (Taiwan))
[SO-PS-10-05]Fabrication of α-quartz-type GeO2 thin filmsby water-vapor oxidation
〇Busaya Sonjaiyout1, Mikio William Yoshioka-Hunter1, Masaru Susa1, Masao Kamiko2, Kentaro Kyuno1 (1. Shibaura Inst. of Technology (Japan), 2. The Univ. of Tokyo (Japan))
[SO-PS-10-06]Crystal Indium Oxide FET with High Mobility and Excellent Reliability Characteristics
〇Nozomi Kamata1, Chihiro Inagaki1, Ryosuke Motoyoshi1, Taichi Ebihara1, Kazuma Furutani1, Takanori Matsuzaki1, Sachiaki Tezuka1, Tsutomu Murakawa1, Kazuya Sugimoto1, Kota Shinnoki1, Hiromichi Godo1, Kenichi Okazaki1, Shunpei Yamazaki1 (1. Semiconductor Energy Laboratory CO., LTD. (Japan))
[SO-PS-10-07]Fast Microwave Activation of Solution-Processed a-IGZO TFTs with Improved Electrical Stability through Oxygen-Bonding Control
〇Tae-Hoon Kim1, Ki-Ju Park1, Won-Ju Cho1 (1. Kwangwoon Univ. (Korea))
[SO-PS-10-08]Highly Stable Al-IZTO Thin-Film Transistors Enabled by Microwave Annealing for OLED-on-Glass Backplanes
〇Seung-Hwa Choi1, Ki-Ju Park1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1 (1. Kwangwoon Univ. (Korea), 2. Electronics and Telecommunications Res. Inst. (Korea))
[SO-PS-10-09]Thermally Stable IGO Thin Films Grown by Supercycle ALD Using Novel In and Ga Precursors with Identical Amidinate Ligand Structures
〇Jun Yong Lee1,2, Dahui Jeon1,2, Minsuk Sung2,3, Changbong Yeon4, Jaesun Jung4, In-Hwan Baek1,2 (1. The Univ. of Inha (Korea), 2. The Univ. of Inha IPCC (Korea), 3. Tanhay Inc. (Korea), 4. Soulbrain Co., Ltd. (Korea))
[SO-PS-10-10]Mitigating the Mobility–Stability Trade-Off in Microwave-Annealed AIZTO/ZTO Heterojunction TFTs for High-Resolution OLED-on-Glass Microdisplays
〇Seung-Jin Lee1, Yoon-Sub Shin1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1 (1. Kwangwoon Univ. (Korea), 2. Electronics and Telecommunications Res. Inst. (Korea))
[SO-PS-10-11]Thermionic Emission-Diffusion and Series-Shunt Path Limited Electron Transport in Total Ionizing Dose Exposed IGZO/Pt Schottky Barrier Diode
〇Jay Singh1, Suman Gora1, Prince Mishra1, Arnab Datta1 (1. Indian Institute of Technology Roorkee (India))
[SO-PS-10-12]Selective Etch-Back Process for Raised Source/Drain SnO2 Thin-Film Transistors
with ITO Source/Drain Electrodes
〇- SangBeom Seo1,2, Dahui - Jeon1,2, In-Hwan - Baek1,2 (1. The Univ. of INHA (Korea), 2. The Univ. of INHA IPCC (Korea))
[SO-PS-10-13]Cu Resistivity Reduction by Ta Surface Oxidation Control Based on In-situ XPS Analysis
〇Yukiaki Oono1, Yousuke Machida1, Kazuhiko Tonari1, Kyouji Notaki2, Mauo Sogou2, Daisuke Sakai2, Shuzo Fujimura2,3 (1. ULVAC Inc. (Japan), 2. ULVAC-PHI Inc. (Japan), 3. Institute of Science Tokyo Univ. (Japan))
