2026 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-5]Ferroelectric FET 2

Thu. Sep 17, 2026 8:30 AM - 9:45 AM JST
Thu. Sep 17, 2026 11:30 PM - 12:45 AM UTC
Room B(Convention Hall 2, 2nd Floor)
Session Chair:Kouichi Nagai(RAMXEED), E Ray Hsieh(National Yang Ming Chiao Tung Univ.)
8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[B-5-01 (Invited)]Device-to-Package Co-Design of Vertically Integrated FeRAM for Efficient AI Memory

〇Vijaykrishnan Narayanan Narayanan1, Kai Ni2 (1. The Pennsylvania State Univ., USA (USA), 2. Notre Dame Univ., USA (USA))
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[B-5-02]Investigation of N2O Gas-Treated Interfacial Layer and ZrO2 Seed Layer on Ferroelectricity and Memory Window of UTB HZO FeFETs

Dong-Ru Hsieh1, Hsin-Yu Chen1, Li-Quan Yang1, Nai-Fang Hsu1, Yu Fu1, 〇Tien-Sheng Chao1 (1. National Yang Ming Chiao Tung University (NYCU) (Taiwan))
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[B-5-04]Achieving Low-Voltage Operation and Superior Endurance via Hybrid HAO/HZO Ferroelectric Layers and Microwave Annealing

〇Ming-Chen Chou1, Yu-Cheng Lin1, Yung-Hsien Wu1 (1. National Tsing Hua Univ. (Taiwan))
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