2026 International Conference on Solid State Devices and Materials
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Session Details

Short Oral Presentation08: Low Dimensional Devices and Materials

[SO-PS-08]08: Low Dimensional Devices and Materials

Wed. Sep 16, 2026 1:30 PM - 2:00 PM JST
Wed. Sep 16, 2026 4:30 AM - 5:00 AM UTC
Room J(107, 1st Floor)
Session Chair:Takuo Sasaki(QST), Masafumi Jo(RIKEN)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-08-01]Effects of Surface MoS2 Layer Number on
Photon-Enhanced Thermionic Emission from Si-Based Emitters

〇Rikiya Matsushima1, Akihisa Ogino1 (1. Shizuoka Univ. (Japan))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-08-02]Monolayer MoS2 Lateral p–n Homojunctions Synthesized by Two-Step Processes

〇Mitsuhiro Okada1, Yuki Okigawa1, Takatoshi Okigawa Yamada1 (1. Natl. Inst. Adv. Indus. Sci. Tech. (Japan))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-08-03]Impact of Gate Metal Adhesion Layers on Gate Dielectric Properties in Wet-Transferred MoS2/Al2O3 Bottom-Gated MOSFETs

〇Shiho Nakamura1, Yuanyuan Shi2, Xiao Yu3, Nobuyuki Aoki1, Mengnan Ke4 (1. Chiba Univ. (Japan), 2. Univ. of Sci. and Tech. of China (China), 3. Xidian Univ. (China), 4. Yokohama National Univ. (Japan))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-08-04]Crossover from Coulomb-Dominated to Phonon-Mediated Drag in SOI Electron–Hole Bilayers

〇Filchito Renee G. Bagsican1, Nabil Ahmed1, Masahiro Hori1,2, Yukinori Ono1,2 (1. Research Inst. of Electronics, Shizuoka Univ. (Japan), 2. Graduate School of Sci. and Tech., Shizuoka Univ. (Japan))
1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-08-05]LED-Integrated MXene Memristive Gas Sensor for Visual NO2 Detection

〇Sanggyu Bang1, Hee-Dong Kim1 (1. Sejong Univ. (Korea))
1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-08-06]Effective Remote Modulation p-Type Doping in Few-Layer WSe2 Field-Effect-Transistors using V2O5/h-BN Heterostructures

〇Jungon Yu1, Younghoon Cho1, Kyunghoon Kim1 (1. Sungkyunkwan Univ. (Korea))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-08-07]Characterization of Modulation-Doped InGaAs Core-Multishell Nanowires on SOI (111) and Vertical Tunnel Transistor Applications

〇Kai Fujimoto1,2, Keita Taniyama1,2, Yuki Azuma1,2, Katsuhiro Tomioka1,2 (1. Hokkaido Univ. (Japan), 2. Research Center for Integrated Quantum Electronics (RCIQE) (Japan))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-08-08]First-Principles Investigation of a Novel a-CoSi2/1T-MoS2/Doped Silicon (100) Contact Architecture for Reduced Contact Resistivity

〇KUNAL -1, Amit Kumar Singh Chauhan1, Harsh Raju1, Vishvendra Singh Poonia1, Sanjeev Kumar Manhas1 (1. Indian Inst. of Tech. Roorkee (India))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-08-09]Bottom-Up Direct Epitaxial Growth of Tunable TMD Layers by Oxide-Assisted Engineering: From Single-Crystal Synthesis to Memristors

〇Shih Jie Chiu1, En Yu Lin1, Yen Lin Huang1, Yu Chuan Lin1 (1. National Yang Ming Chiao Tung Univ. (Taiwan))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-08-10]Formation of stable HfO2/MoS2 interfaces by off-axis e-beam evaporation under controlled O2 partial pressure

〇Hiroyasu Maekawa1, Jui-Teng Chang1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1. The University of Tokyo (Japan), 2. NIMS (Japan))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-08-11]Characterization Strategy for Interfacial Traps and Potential Distribution of Ultrathin 2D-MISFET Channel

〇RYU HASUNUMA1, Masaru Sato1, Yuto Terasaka1, Takeo Matsuki1, Toshifumi Irisawa2, Tomonori Nishimura3, Naoya Okada2, Wen Hsin. Chang2, Akiko Ueda2, Hirokazu Fukidome4, Takahiro Iizuka5, Kosuke Nagashio3 (1. Univ. of Tsukuba (Japan), 2. AIST (Japan), 3. The Univ. of Tokyo (Japan), 4. Tohoku Univ. (Japan), 5. Hiroshima Univ. (Japan))
1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-08-12]Bridging the Absorption-Responsivity Gap in Si/Ge Core-Shell Nanoresonators via Cross-Sectional Geometric Evolution

Guanghui Wang1,2, 〇Wipakorn Jevasuwan1, Naoki Fukata1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))
1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-08-13]Tailored Seeding Technology for Threshold Voltage (Vth) Control in Monolayer WSe2 p-FET

〇Tsung-Che Hsieh1, Li-Heng Han1, Hung-Hui Yang1, Li-Hsuan Li1, Yu-Lin Li1, Pin-Yi Li1, Ching-Wen Tsai1, Chih-Chao Yang2, Chao-Hui Yeh1 (1. National Tsing Hua Univ. (Taiwan), 2. Taiwan Semiconductor Research Inst. (Taiwan))
1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-08-14]UV-Ozone Assisted Defect Passivation in ZrO2 Top-Gated Bi2O2Se Field-Effect Transistors

〇Yi-Chuan Hou1, Chi-Chun Cheng1, Po-Wen Chiu1 (1. The Univ. of Tsing Hua (Taiwan))
1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-08-15]Atomic Resolution Analysis of Highly Oriented MoS2/sapphire Interface

〇Emi Kano1, Jun Nara2, Keisuke Atsumi3, Shuhong Li3, Tomonori Nishimura3, Kaito Kanahashi3, Jun Uzuhashi2, Kosuke Nagashio3, Yoshiki Sakuma2, Nobuyuki Ikarashi1 (1. Nagoya Univ. (Japan), 2. NIMS (Japan), 3. The Univ. of Tokyo (Japan))
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