Session Details
[SO-PS-05]Photonics: Devices / Integration / Related Technology
Wed. Sep 16, 2026 1:30 PM - 1:52 PM JST
Wed. Sep 16, 2026 4:30 AM - 4:52 AM UTC
Wed. Sep 16, 2026 4:30 AM - 4:52 AM UTC
Room D(101B, 1st Floor)
Session Chair:Kouichi Akahane(NICT)
[SO-PS-05-01]Beyond 45-GHz-Bandwidth Si Mach-Zehnder Modulator with Interdigitated p-n Junction Structure for Future AI-Data Center Network
〇Chih-Hsien Cheng1, Atsushi Matsumoto1, Naokatsu Yamamoto1, Gong-Ru Lin2, Kouichi Akahane1, Satoshi Shinada1 (1. NICT (Japan), 2. National Taiwan Univ. (Taiwan))
[SO-PS-05-02]Vector Beam with Phase-Controlled Angular Momentum from InGaAsP Microdisk Laser
Cheng-Ju Li1,2, 〇Zheng-Zhe Chen1,3, Chi-Ti Hsieh1, Yi-Shan Wu1, Meng-Shu Rao1,2, Chia-Hung Lin1,2, Shu-Wei Chang1,2, Min-Hsiung Shih1,2,4 (1. Academia Sinica (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. National Taiwan Univ. (Taiwan), 4. National Sun Yat-sen Univ. (Taiwan))
[SO-PS-05-03]Humidity-Stable Zero-Bias 254-nm Perovskite Photodetector Using a Hydrophobic Li-Doped NiO Hole Transport Layer
〇Hyung Wook Kim1, Same Yoon1, Uhyeong Noh1, Joo Hyuk Park1, Chung Wung BARK1 (1. The Univ. of Gachon (Korea))
[SO-PS-05-04]Enhanced Performance of Quantum Dot Spin-Polarized Light-Emitting Diode via Post-Deposition Annealing of MgO/CoFeB/Mo Spin Injector
〇Itsu Tanaka1, Daiki Mineyama1, Shinnosuke Wada1, Ayano Morita1, Hiroto Kise1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1. IST, Hokkaido Univ. (Japan))
[SO-PS-05-05]Time-Resolved Quantum FDTD Simulation of Dynamic Quantum Interference in Photonic Circuits
〇Masahiro Kato1, Satofumi Souma1 (1. Kobe Univ. (Japan))
[SO-PS-05-06]Au Nanoparticle-Decorated Mist-CVD Ga2O3 Deep-UV Photodetectors with Enhanced Photoresponse
〇Chien-Sheng Cheng1, Shiou-Ying Cheng3, Wen-Chau Liu1,2, Wei-Chou Hsu1,2 (1. Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University (Taiwan), 2. Institute of Microelectronics, National Ilan University (Taiwan), 3. Department of Electrical Engineering, National Ilan University (Taiwan))
[SO-PS-05-07]High temperature PVD AlN buffer growth on Si (111) for epitaxial Ga(Al)N
〇Houssem BOUKHALFA1 (1. Applied Materials (France))
[SO-PS-05-08]An Analytical Capacitance Model for Vertical Pinned Photodiodes
〇Jiwon Bak1, Jiwon Lee1 (1. Pohang Univ. of Sci. and Tech. (POSTECH) (Korea))
[SO-PS-05-09]Passivation of the InP-Insulator Interface for Dark Current Reduction in InGaAs SWIR Detectors
〇Maria Sanchez1,2, Cyril Cervera2, Jacques Baylet2, Romain Paquet2, Marc Veillerot2, Olivier Saxod2, Sophie Barbet2, Nathalie Sommacal2, François Nardelli2, Denis Mariolle2, François Boulard2, Frederic Boeuf1 (1. STMicroelectronics (France), 2. CEA-Leti (France))
[SO-PS-05-10]Near-Unity Internal Quantum Efficiency in Mg2Si SWIR Photodiodes Achieved by Reverse-Bias Suppression of P-Layer Recombination
〇Ryosuke Furuta1, Kosuke Shimano1, Shunya Sakane1, Haruhiko Udono1 (1. The Univ. of Ibaraki (Japan))
[SO-PS-05-11]Substrate Orientation-Dependent Oxygen Incorporation and Superconductivity in thin NbN Films deposited by Reactive Sputtering
〇WEI CHANG1,2, Yu-Ting Lin2, Ping-Feng Chi2, Sheng-Tien Lin1, Wen-Hao Chang2, Ming-Jye Wang2, Jing-Jie Wang1, Jing-Wen Zhang1, Yung-Lan Chuang1, Tung-Sen Lin1, Ming-Lun Lee3, Jinn-Kong Sheu1 (1. National Cheng Kung Univ. (Taiwan), 2. Academia Sinica (Taiwan), 3. Southern Taiwan Univ. of Science and Technology (Taiwan))
