Longitudinal optical phonon has a high probability of interaction with the electron system. GaInN crystals have significant spatial nonuniformity in alloy composition. This article mainly focuses on the LO phonon dynamics in a nonuniformity crystal system. The investigation of mode-energy variation when heating between E₂(high) and A₁(LO) modes in In_0.05Ga_0.95N/GaN heterostructures by using 325-nm laser with microscopic Raman spectroscopy. The peak energies of these modes shift to the lower energy sides by increasing the excitation power. The decrement for the E₂(high) mode energy shows significant nonuniformity in temperature. In the mapping images of decrements in these energy modes, the decrement of the A₁(LO) mode energy is lower than the surrounding region in the region of high decrement in the E₂(high) mode energy. This result reveals that the local increase in the crystal temperature and the local increase in electron density can be simultaneously exhibited and investigated.