講演情報
[22p-P07-58]Modulation of Hysteresis in MoS2 MOSFET through Inorganic Molecular Doping toward memristive behavior
〇(P)Elamaran Durgadevi1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
キーワード：
Neuromorphic、Memristor、2D materials
Memristors, also known as memory resistors, have gained widespread attention for their applications in simulating biological synapses due to their structural similarity to synapses and their superior capabilities in information storage and processing. In the case of MoS2 memristors, hysteresis is associated with the switching behavior among various resistance states. The presence of hysteresis renders MoS2 as a potential candidate for memristor and could be used for neuromorphic applications in which gate and drain terminal acts as a pre and postsynaptic terminal and MoS2 as a resistive channel.
In this study, we explored the impact of inorganic molecular insertion with AuCl3 on the MoS2 MOSFET to modulate its hysteresis behavior for memristive application. MoS2 flakes were mechanically exfoliated onto a SiO2 layer grown on a heavily doped p-type silicon substrate. Two-terminal electrodes were fabricated using photolithography patterning, and subsequently, inorganic molecular doping with AuCl3 was carried out through drop-casting and annealing on the source/drain regions. Metal electrodes are then formed by the deposition of Au followed by lift off process. The introduction of AuCl3 through inorganic molecular insertion increased trapping levels at the interface, attributed to Au-S bonding, leading to a significant hysteresis effect. The findings demonstrate the potential for modulating the hysteresis behavior in MoS2 device through AuCl3 doping. Nevertheless, additional optimization in doping techniques is essential to achieve a wider hysteresis effect suitable for neuromorphic applications.
In this study, we explored the impact of inorganic molecular insertion with AuCl3 on the MoS2 MOSFET to modulate its hysteresis behavior for memristive application. MoS2 flakes were mechanically exfoliated onto a SiO2 layer grown on a heavily doped p-type silicon substrate. Two-terminal electrodes were fabricated using photolithography patterning, and subsequently, inorganic molecular doping with AuCl3 was carried out through drop-casting and annealing on the source/drain regions. Metal electrodes are then formed by the deposition of Au followed by lift off process. The introduction of AuCl3 through inorganic molecular insertion increased trapping levels at the interface, attributed to Au-S bonding, leading to a significant hysteresis effect. The findings demonstrate the potential for modulating the hysteresis behavior in MoS2 device through AuCl3 doping. Nevertheless, additional optimization in doping techniques is essential to achieve a wider hysteresis effect suitable for neuromorphic applications.