講演情報
[22p-P07-67]Application of Monoatomic Boron Vacancy of Hexagonal Boron Nitride as Ultra-thin Van der Waals Magnetic Tunnel Junction
〇(DC)Halimah Harfah1, Yusuf Wicaksono2, Gagus K. Sunnardianto3, Muhammad A. Majidi5, Koichi Kusakabe4 (1.Osaka Univ, 2.RIKEN CPR, 3.BRIN Indonesia, 4.Hyogo Univ., 5.Univ. Indonesia)
キーワード：
spintronics、monoatomic vacancy、hexagonal Boron Nitride
We present a theoretical study of the magnetic properties and spin-dependent transport of the monoatomic boron vacancy (VB) of hexagonal boron nitride (hBN). The magnetic properties and electronic structure of the system were investigated using density functional theory, while the transmission probability of the MTJ was investigated using the Landauer–Buttiker formalism within the non-equilibrium Green function method. The Stoner gap was found to be created between the spin-majority and spin-minority channels on the density of states of hBN(VB) near the Fermi energy. By utilizing this Stoner gap, a new design of an ultrathin van der Waals-based magnetic tunnel junction (MTJ) based on hBN(VB) that consists of a three-atom layer thickness, i.e., graphene (Gr) sandwiched with hBN(VB), was proposed. The hBN(VB)/Gr/hBN(VB) MTJ gives a possible control of the spin valve by considering two different magnetic alignments of the upper and lower hBN(VB) layers, antiparallel and parallel configuration. The results showed that the PC state exhibits high electron transmission, whereas the APC state results in low electron transmission, resulting in a remarkable TMR ratio of approximately 400%.