講演情報
[23p-12D-12]Enhancement of anomalous Nernst effect in annealed-CoGe thin films
〇(M2)Takuya Tsujimoto1, Takeshi Fujita2, Shigenori Ueda3, Toshio Miyamachi1, Masaki Mizuguchi1 (1.Nagoya Univ., 2.Kochi Univ. Tech., 3.NIMS)
キーワード：
spintronics、spin caloritronics、the Anomalous Nernst effect
We investigated the anomalous Nernst effect in CoGe thin films and effect of post-annealing for ANE was investigated. CoGe thin films were fabricated by the co-sputtering method on MgO substrates at room temperature. Post-annealing was performed at temperatures ranging from 473 to 1073 K. Crystallographic structures were characterized by a transmission electron microscope (TEM). The Nernst voltage was measured by a physical property measurement system (PPMS). It was confirmed that as deposited CoGe thin films possessed columnar structures and the samples annealed at 573 - 773 K possessed island ordered phase of Co2Ge by cross-sectional TEM images. Sxy increased in the latter series and reached up to 1.2 µV/K, which substantiates the effect of post-annealing for ANE. To investigate the mechanism of the enhancement of the ANE, we conducted hard x-ray photoelectron spectroscopy (HAXPES) and studied electronic structures of each sample.