講演情報
[23p-31A-11]Investigation of interface traps in β-(AlGa)2O3/Ga2O3 heterostructure by dynamic capacitance dispersion technique
〇(DC)Fenfen Fenda Florena1, Aboulaye Traore1,2, Ryo Morita1, Yun Jia1, Hironori Okumura1,2, Takeaki Sakurai1,2 (1.Univ. Tsukuba, 2.Japanese - French Lab. for Semiconductor Physics and Technology (J-FAST), Univ. Grenoble Alpes, Univ. Tsukuba)
キーワード：
gallium oxide、heterostructure、interface state
Electrically active defects in β-(AlGa)2O3/Ga2O3 heterostructure were investigated by means of dynamic capacitance dispersion technique in order to to study the origin of low 2DEG mobility at the interface. Multifrequency C-V measurement showed a shift in the capacitance dispersion curves indicated the existance of traps at the interfacen region. This traps are considered responsible for the low 2DEG mobility by introducing the additional scattering mechanisms in the device. Using theoretical formulation of the equivalent circuit of MODFET with interface traps, the density of interface states and time constants were discussed.