講演情報
[24a-12H-3]High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films
〇(P)Nana Sun1, Kazuki Okamoto1, Shinnosuke Yasuoka1, Naoko Matsui2, Toshikazu Irisawa2, Koji Tsunekawa2, Soshun Doko2, Hiroshi Funakubo1 (1.Tokyo Tech., 2.Canon ANELVA Corp.)
キーワード：
ferroelectricity、(Al、Sc)N thin films、hydrogen heat treatment
Changes of the crystal structures and ferroelectric properties with the post-heat treatment up to 600 °C under various atmospheres (Ar+H2 and Ar) were investigated for (Al0.8Sc0.2)N films sandwiched by TiN electrodes. Obvious crystal structure change was not detected independent of the temperature and the atmosphere. Remanent polarization kept an almost constant value, while the coercive field increased about 9% by the heat-treated up to 600 °C. This change is much smaller than reported one for ferroelectric (Hf,Zr)O2 films as well as Pb(Zr,Ti)O3 and SrBi2Ta2O9 films for a wide temperature range from 400 to 600 oC.