講演情報
[24a-12K-6]Carrier Properties Control of As-doped BaSi2 Grown by Molecular Beam Epitaxy
〇(M1)Nurfauzi Abdillah1, Sho Aonuki1, Takashi Suemasu1 (1.Univ. of Tsukuba)
キーワード：
semiconducting sillicides、carrier properties
One of the challenges in realizing homojunction BaSi2 solar cells is the formation of a high-quality n-type BaSi2 layer. Previously, the formation of As-doped BaSi2 grown by molecular beam epitaxy (MBE) using GaAs as the arsenic source has been demonstrated. However, the carrier concentration is not well controlled. This is speculated due to the incorporation of Gallium from GaAs. In this work, a Gallium filter is installed on top of the GaAs crucible. we investigated the GaAs temperature (TGaAs) dependence on carrier concentration and mobility by Hall measurement. All grown samples show p-type conductivity and an increasing trend of hole concentration can be seen at TGaAs = 350 - 500°C. The photoresponisivity of grown samples at different TGaAs shows slight differences except the sample grown at TGaAs = 400°C.