For the past decades, the key to achieving higher performance and efficiency for devices in nanoelectronics has been by reducing their dimensions. However, the increasing miniaturization of devices such as silicon (Si) based transistors has faced many challenges. In this direction, alternatives are needed to overcome this limitation. The band-to-band tunneling (BTBT) mechanism present in Esaki diodes offers an insight into new-generation Tunneling Field-Effect Transistors (TFETs) [1]. Esaki diodes are highly doped pn diodes that exhibit BTBT mechanism observed as a behavior called negative differential conductance (NDC) [2]. NDC describes an uncommon property of certain electrical components where an increase in the voltage across the device terminals results in a decrease in the electric current passing through the device due to the BTBT between degenerately-doped p and n regions [2].