[24p-P16-1~41] 21 合同セッションＫ「ワイドギャップ酸化物半導体材料・デバイス」（ポスター）

英語発表

[24p-P16-39] Effect of Thermal Pressing Process on Resistivity of Ga Doped ZnO Nanoparticle Layers

〇(M1)Shrestha Dey Monty¹, Toshiyuki Youshida¹, Yasuhisa Fujita¹ (1.Shimane University)

キーワード：

ZnO、Particle layers、Thermal Pressed

Using semiconducting particle layers for TFT channel layers instead of thin films is one of attracting issues in the semiconductor processing field, since there is wider selectivity on substrates like flexible and/or bendable materials etc., low-cost processing and large area compatibility. In this study, ZnO nanoparticles are used to form particle layers. However, the extremely high sheet resistance prevents their practical use as TFT channels. There are some trials in our lab to reduce the resistance; one is Ga doping into ZnO nanoparticles, and the other is thermal pressing process. Here, the combined process between Ga-doping and thermal pressing was tried.