[25a-1BJ-1~10] CS.6 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

9:30 〜 9:45英語発表

[25a-1BJ-3] Memory Window Narrowing Mechanisms and Recovery Behaviors in HZO/Si FeFETs

〇(D)ZUOCHENG CAI¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The University of Tokyo)

キーワード：

Non-Volatile Memory、Fatigue Recovery

Since the HfO2-based FeFETs were reported in 2011, its excellent characteristics such as superior scalability and the compatibility with CMOS process have attracted wide attention [1]. However, the endurance issues (typically 104 -106 ) greatly impede the application [2] and its underlying mechanisms need to be further investigated. In this work, we systematically study the mechanisms of memory window (MW) narrowing and recovery characteristics of FeFETs with 6-nm-thick Hf0.5Zr0.5O2 (HZO). We have newly found better endurance with low-voltage operation, and the MW recovery phenomenon in FeFETs after low-voltage operation.