講演情報
[25a-71B-2]Why does everyone transfer MoS2 grown on sapphire to a Si substrate?
-Decoupling the interaction between MoS2/sapphire-
〇(D)Li Shuhong1, Keisuke Atsumi1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1.Univ. of Tokyo, 2.NIMS)
キーワード：
MOCVD MoS2、Interaction、Wafer-scale FET fabrication
Top-gate 2D FET now calls for wafer-scale fabrication. MOCVD growth has provided a huge opportunity for high-quality growth of 2D semiconductors, however, the integration of FET on top of the grown substrate, that is, the c-plane sapphire substrate is hardly reported. While transferring to Si substrate is the mainstream, the critical question remains: why does everyone transfer 2D from sapphire to Si substrate?
In this study, a systematic investigation of the interaction between MoS2 and sapphire is performed. FET fabrication indicates the heavy e-doping from sapphire. Moreover, the decoupling of interaction was demonstrated through immersing isolated MoS2 channel in a water bath
In this study, a systematic investigation of the interaction between MoS2 and sapphire is performed. FET fabrication indicates the heavy e-doping from sapphire. Moreover, the decoupling of interaction was demonstrated through immersing isolated MoS2 channel in a water bath