[25p-52A-1~6] 13.7 化合物及びパワーデバイス・プロセス技術・評価

13:00 〜 13:15英語発表

[25p-52A-1] Ga₂O₃ (010) FinFETs with On-Axis (100) Gate Sidewalls

〇Zhenwei Wang¹, Sandeep Kumar¹, Takafumi Kamimura¹, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki^1,3 (1.NICT, 2.Tokyo Univ. of Agriculture and Technology, 3.Osaka Metropolitan Univ.)

キーワード：

Gallium oxide、FinFET

We report fabrication and electrical characteristics of vertical FinFETs on Ga₂O₃ (010) substrates with on-axis (100) gate sidewalls. The FinFETs demonstrated decent device characteristics represented by a low specific on-resistance of 6.9 mΩcm², a large output current on/off ratio of ~10⁹, and a small subthreshold slope of 82 mV/decade due to formation of high-quality (100) gate sidewalls. These results can suggest the great potential of Ga₂O₃ (010) FinFETs.