セッション詳細
[11a-B21-1~7]原子層プロセス(ALP:Atomic Layer Process)の解析技術と応用技術(4)
2026年9月11日(金) 9:00 〜 11:30
B21 (工学部 B棟)
[11a-B21-1]オープニング
〇霜垣 幸浩1,2 (1.東大工、2.北大工)
[11a-B21-2]Atomic Layer Deposition for next generation semiconductor devices
〇Hyungjun Kim1 (1.School of Electrical and Electronic Engineering, Yonsei University)
[11a-B21-3]Atomic Layer Engineering of Epitaxial Metal, Ferroelectric, and Antiferroelectric Materials for Advanced Devices
〇Miin-Jang Chen1, Yu-Sen Jiang1 (1.National Taiwan University)
[11a-B21-4]Kinetic Monte Carlo Study of Defect-Mediated Morphological Evolution during TMA/H2O Al2O3 Atomic Layer Deposition
〇(M2)Yichen ZOU1, Yuxuan Wu1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo)
[11a-B21-5]Surface reaction analysis of thermal ALE of transition metal oxides with acetylacetonate ligands
〇(P)Lucas Fabian Spiske1, Satoshi Hamaguchi1 (1.Osaka University)
[11a-B21-6]Adsorption state study of Cu diketonates on Cu surface with Neural Network Potential
〇Yuxuan Wu1, Yichen Zou1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
[11a-B21-7]Transition metal carbide thin films prepared by atomic layer deposition: A new enabler for advanced metallization process
〇Soo-Hyun Kim1 (1.Ulsan National Institute of Science and Technology)
