[15a-70A_101-1~7] 原子層プロセス（ALP：Atomic Layer Process）の解析技術と応用技術（３）

9:05 〜 9:35英語発表

[15a-70A_101-2] Establishing High-Temperature Area Selective ALD Process through Surface Inhibition

〇Haonan Liu¹, Ken Okoshi¹, Hiroki Murakami¹, Yamato Tonegawa¹ (1.TEL TTS)

キーワード：

Area Selective Deposition、ALD、SiN

Current investigations into area selective atomic layer deposition (AS-ALD) are garnering significant attention. AS-ALD enhances the efficiency of deposition on patterned substrates and high aspect ratio (AR>70) structures, showcasing its potential for a range of semiconductor manufacturing applications. Commonly employed inhibitors, such as self-assembled monolayers (SAMs) and (dimethylamino) trimethylsilane (DMA-TMS), are utilized to passivate areas where growth is not desired. However, these materials introduce carbon impurities and have limited thermal stability, leading to degraded selectivity at temperatures above 500°C. While fluorination offers a potential solution to these challenges, its application is restricted by damage to silicon substrates. In this study, we demonstrate a comprehensive approach for AS-ALD on silicon-based materials, Si and SiN vs. SiO₂. Our method integrates in-situ native oxide removal with high-temperature area selective deposition, achieving outstanding selectivity and broad compatibility without risk of substrate damage.