講演情報
[15a-70A_101-6]Development of Atomic Layer Deposition and Atomic Layer Etching Processes for Semiconductor Device Fabrication using In Situ Diagnostics
〇Sumit Agarwal1 (1.Colorado Sch Mines)
キーワード：
semiconductors、atomic layer deposition、plasma processing
As critical device dimensions continue to shrink in semiconductor manufacturing to <2 nm, precise atomic layer deposition (ALD) and etching processes will be crucial in device fabrication. Future device fabrication will also require area-selective ALD, and etching processes that can be controlled at the atomic scale. In this presentation, I will demonstrate that in situ optical diagnostics such as attenuated total reflection Fourier transform infrared spectroscopy and spectroscopic ellipsometry can be used to understand the surface reactions and film growth or removal during atomic scale processing. In the first part of the talk, I will discuss plasma-assisted atomic layer deposition (ALD) of SiO2 from two different aminosilanes, and show what factors determine the surface site density and the corresponding growth per cycle. Next, I will discuss area-selective ALD of Al2O3 on SiNx by passivating the nongrowth SiO2 surface with different aminosilanes. I will also discuss the role of surface reactive site density and the size of the inhibitor molecules in achieving growth selectivity. In the last part of the talk, I will show that molecular layer deposition can be used to improve etch profiles during reactive ion etching of SiO2/SiNx stacks in an HF plasma.