講演情報
[15a-70A_101-7]Plasma-Based Atomic Layer Etching for Atomic-Scale Semiconductor Device Fabrication
〇Heeyeop CHAE1 (1.Sungkyunkwan Univ. (SKKU))
キーワード：
Semicondcutor Device Fabrication、Atomic Layer Etching、Plasma Etching
The critical dimensions of semiconductor devices continue to shrink toward the nanometer and even angstrom regimes in both 2D and 3D architectures, driving a growing demand for atomic-scale precision in etching. This talk will introduce plasma-based atomic layer etching (ALE) approaches developed for anisotropic and isotropic patterning of metals and dielectrics, including Mo, Ru, Co, TiN, TaN, Al2O3, HfO2, ZrO2, SiO2, and SiNx. A typical ALE sequence consists of surface modification followed by material removal. Surface modification strategies include fluorocarbon deposition, direct fluorination, chlorination, and oxidation using plasma-generated radicals. The modified surface layers are then removed by ion bombardment, thermal desorption, ligand exchange, ligand volatilization, or halogenation. Key characteristics such as reaction kinetics, surface roughness, and residual contamination will also be discussed.