[15p-SL_101-1~17] CS.4 6.1 強誘電体薄膜、15.4 III-V族窒化物結晶のコードシェアセッション

16:15 〜 16:30英語発表

[15p-SL_101-10] Single Crystal ScAlN Growth by RF-MBE Method

〇Trang Nakamoto¹, Hayato Nishi², Takashi Fujii³, Tsutomu Araki² (1.Ritsumeikan Univ. R-GIRO, 2.Ritsumeikan Univ. Col. of Sci. & Eng., 3.Ritsumeikan Univ. ROST)

キーワード：

ScAlN、ferroelectric、GaN substrate

ScAlN is a promising material with improved spontaneous polarization and piezoelectric properties, potentially enabling ferroelectric functionality. The main challenges in growing ScAlN are maintaining a high-quality wurtzite structure and preventing phase separation. Conventional sputtering methods are unsuitable for high-quality crystal growth, and MOCVD methods have issues with inefficient Sc precursors and substrate degradation at high temperatures. RF-MBE allows precise control at the atomic level and has the potential to freely adjust the Al and Sc compositions over a wide range. In this study, we aim to establish optimal growth conditions and precise control of the Sc composition using RF-MBE, thereby achieving ScAlN single crystal growth.