講演情報
[15p-W8E_307-10]Whole-Wafer Imaging of 6-inch 4H-SiC Wafers using Synchrotron X-ray Topography
at SPring-8 BL16B2
〇(M2)RUI ZHOU1, Weiyuan Xia1, Yuhui Huang1, Kentaro Kajiwara2, Takashi Kameshima2,3, Taito Osaka3, Makina Yabashi3, Takayoshi Shimura1,3 (1.Waseda Univ., 2.JASRI, 3.RIKEN)
キーワード：
Silicon Carbide (SiC)、Synchrotron X-ray Topography、Crystal Defects
We present whole-wafer synchrotron X-ray topography (XRT) of a 6-inch 4H-SiC wafer using a high-resolution wide-field system at SPring-8 BL16B2. Measurements were performed with 8.5 keV X-rays and a 2D detector (14,192 × 10,640 pixels, 0.72 μm effective pixel size, 10 × 8 mm field of view). Because wafer warpage limits the Bragg-condition area in a single view, five images were taken at each position with slight wafer rotations to compensate local Bragg-angle variations, then merged into one 8 × 10 mm composite image. Repeating this over the wafer yielded 292 composite images, stitched into a full-wafer XRT map. With 10 s exposure per image, the total measurement time was 5 h 40 min including motion and data transfer. Despite slight resolution loss from combining, threading screw and edge dislocations (TSDs/TEDs) remain clearly visible, demonstrating high-throughput, high-resolution whole-wafer XRT and ongoing progress in automated defect analysis.