講演情報
[15p-W9_324-13]Photoluminescence Characterization of Color Centers in β-Ga2O3 Emitting in the Telecom O-Band
〇(D)Mathias Marchal1,2, Keidai Toyoshima1, Riena Jinno1, Satoshi Iwamoto1 (1.Univ. of Tokyo, 2.Denmark Technical Univ.)
キーワード：
color centers、beta-gallium oxide、photoluminescence spectroscopy
Color centers in beta-gallium oxide are emerging as promising candidates for quantum photonics due to their optically addressable defect states. We investigate O-band–emitting color centers in Fe-doped (010) beta-gallium oxide using low-temperature photoluminescence spectroscopy with pulsed Ti:Sapphire excitation. The emission spectrum shows a sharp line at 1317 nm, and high-resolution measurements reveal two zero-phonon lines at 1314 nm and 1317 nm. An estimated Debye–Waller factor of ~6% is extracted. Temperature-dependent measurements indicate a decrease in PL intesity with increasing temperature, with an estimated activation energy of 1.2 meV.