講演情報
[16a-M_178-11]Viologen Radical Modified MoS2 Transistors Enabling Memristive Behavior
〇Huiqin Liu1, Durgadevi Elamaran1, Guanting Liu1, Daisuke Kiriya1 (1.Univ. of Tokyo)
キーワード：
Neuromorphics、Transition metal dichalcogenides、Transistors
Neuromorphic devices have attracted growing interest owing to their capability to mimic synaptic functions of the human brain with high parallelism and ultra-low energy consumption. A key requirement for such systems is the realization of reproducible hysteresis dependence modulation. Two-dimensional (2D) inorganic materials offer an attractive platform owing to their atomic thickness and sensitive interfacial electronic properties. However, developing the simple and effective method for achieving tunable hysteresis in 2D devices still remains challenging. Viologen molecules are redox-active compounds capable of stepwise reduction and oxidation, providing tunable electronic states. While viologen molecules in their neutral states (V0) have been widely explored as strong dopants for 2D materials through charge transfer, their radical cation state (V+), which features a spin-active singly occupied molecular orbital (SOMO), has rarely been investigated in 2D device architectures. In this work, we found that the viologen radical on MoS2, a typical 2D material, can serve as redox active charge reservoir, inducing drain current-voltage hysteresis in MoS2 transistors, which will provide potential application in neuromorphic device.