[16a-M_178-1~11] 17.3 層状物質

10:00 〜 10:15英語発表

[16a-M_178-5] Transfer-free top-gate MoS₂ FETs using MOCVD-MoS₂ wafers

〇Juiteng Chang¹, Shuhong Li¹, Kosei Matsumoto¹, Hiroyasu Maekawa¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Yoshiki Sakuma², Takahiro Nagata², Kosuke Nagashio¹ (1.U. Tokyo, 2.NIMS)

キーワード：

MoS2、MOCVD、transfer-free

To fully utilize MoS₂ wafer, direct device fabrication on the as-grown MoS₂ wafer is essential. We demonstrate that H₂ post-annealing process is crucial for suppressing the MoS₂/sapphire interfacial interaction, thereby providing a foundation for device performance evaluation using MoS₂ wafers.