[16a-W2_401-1~9] 15.4 III-V族窒化物結晶

9:00 〜 9:15英語発表

[16a-W2_401-1] [The 47th Young Scientist Award Speech] High-current, high-voltage AlN Schottky Barrier Diodes

〇Cristyan Quinones¹, Dolar Khachariya², Pramod Reddy², Seiji Mita², Jack Almeter¹, Pegah Bagheri¹, Shashwat Rathkanthiwar¹, Ronny Kirste², Spyridon Pavlidis¹, Erhard Kohn¹, Ramon Collazo¹, Zlatko Sitar^1,2 (1.North Carolina State University, 2.Adroit Materials)

キーワード：

ultra-wide bandgap、nitrides

AlN Schottky barrier diodes with low ideality factor (< 1.2), low differential ON-resistance (< 0.6 mΩ cm 2), high current density (> 5 kA cm⁻²), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al_0.75Ga_0.25N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10⁴.