講演情報
[16p-PA2-2]Evidence of spin state-filling from wetting layer in InAs/GaAs quantum dots
〇Ronel Intal Roca1, Rhenish Simon1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
キーワード：
spin、quantum dots、circular polarization
Molecular beam epitaxy (MBE) -grown self-assembled InAs/GaAs quantum dots (QDs) have attracted interest in spin-optic applications due to their long spin lifetime. While high luminescence circular-polarization degree (CPD) values have been reported for InAs/GaAs QDs, owing to the suppression of spin relaxation inside these nanostructures, the influence of the wetting layer (WL) to the spin dynamics is still not well understood. In the present work, the role of the WL is investigated by preparing QD samples with varying areal ratio between the WL and QDs. The spin and carrier dynamics in InAs/GaAs QD and the influence of the WL is investigated by CP-PL measurements. Results suggest that the WL may act as a spin reservoir, injecting spin-polarized carriers into the QDs, resulting in an observed spin state-filling phenomenon.