講演情報
[16p-PA2-3]Comparison of Experiment and Simulation of Size-Dependent Photoluminescence of InAs/GaAs(001) Surface Quantum Dots
〇(D)Dean Von Johari C Narag1, Cyril S Salang1, Ronel Christian Roca2, Itaru Kamiya2 (1.UP Diliman, 2.Toyota Tech. Inst.)
キーワード：
nextnano、Quantum dots、Photoluminescence
Self-assembled InAs quantum dots (QDs) grown on GaAs (001) surfaces remain a subject of interest for their unique and tunable electronic properties. For modeling QDs, k·p envelope function effective mass approximation has become one of the standard tools. Whereas simulation of capped QDs are well studied in the literature and show generally good agreement with experiments, simulation of uncapped suface QDs (SQDs) have not been reported. In this work, we utilize the nextnano software to simulate the optical transitions of molecular beam epitaxy (MBE)-grown SQDs and compare them with photoluminescence (PL) measurements.