講演情報
[16p-PA7-38]AFM-Patterned Graphene Slit Gates for One-Dimensional Exciton Confinement in 2D Semiconductors
〇(P)Lata Chouhan1, Yuta Urano1, Kenji Watanabe2, Takashi Taniguchi1, Ryo Kitaura1 (1.MANA, NIMS, 2.RCEOM, NIMS)
キーワード：
TMD、AFM-Lithography、Device fabrication
Reduced dimensionality can qualitatively reshape exciton transport, interactions, and quantum states, enabling access to the physics of low-dimensional exciton. If the effective dimensionality of excitons can be deliberately engineered, excitons can serve as tunable quasiparticles and provide a broadly applicable platform for exploring emergent quantum phenomena. In monolayer transition metal dichalcogenides (TMDs), strong Coulomb interactions and robust light–matter coupling make excitons an ideal platform for “dimensionality engineering.” A key experimental challenge is device-based: generating a well-defined, spatially engineered out-of-plane electric field that creates a controllable excitonic potential while preserving optical access. Here, we demonstrate a simple approach to achieve one-dimensional (1D) exciton confinement in TMDs by combining an out-of-plane electric field with sub-100 nm-scale gate electrode patterning.