講演情報
[16p-S4_201-14]Current-induced magnetization switching in polycrystalline 2D-MXene/FM bilayers fabricated on thermally-oxidized Si substrates
〇(M1)Mayank Kumar Singh1, Yukiko Takahashi1, Shinji Isogami1 (1.NIMS)
キーワード：
Spin Orbit Torque、MXene、Magnetic Random Access Memory
The Cr2N has been known as one of the two-dimensional MXene phases. In recent years, spin-orbit-torque (SOT) field-free magnetization switching is demonstrated using the full-epitaxial Cr2N/(Co/Pt multilayer) devices, which has attracted attention due to its potential to be an embedded magnetic random-access memory (eMRAM) for future AI technologies. To realize the eMRAM, compatibility with the existing CMOS devices is indispensable, which has been considered challenging for the 2D materials in general. In this study, the materials that act as seed layers are developed on the thermally-oxidized Si substrates, and current-induced magnetization switching (CIMS) was demonstrated.The Cr2N-MXene film was deposited on the Ta (1 nm)/Ru (1 nm) using a reactive sputtering technique. The crystal structures and surface morphology are characterized using XRD, XRF, XRR, and AFM. Photolithography and Ar ion milling were employed to fabricate the measurement devices with Hall cross structure, of which dimension was ~10 micron x 10 micron. Magnetization state in the CIMS was measured by the anomalous-Hall effect with the DC sensing current of 0.5 mA at room temperature. The out-of-plane XRD profiles for the stacking structure with and without Ru shows that the Cr2N-MXene phase was not grown without Ru layer, the pure Cr2N epitaxial layer with a hexagonal (0001) plane was grown on the Ru layer. These results show that the Ru layer plays an essential role for the Cr2N-MXene growth on the Si/SiO2 substrates. The out-of-plane anomalous-Hall measurements clearly confirms perpendicular magnetic anisotropy in the prepared device stacking structure at room temperature. The CIMS loops with the external magnetic fields of +290 Oe and -290 Oe is plotted and the polarity of CIMS changed depending on the sign of magnetic field, suggesting the switching mechanism based on SOT.