[16p-S4_201-13~19] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

18:30 〜 18:45英語発表

[16p-S4_201-18] Reduction of write-error rate for a voltage-controlled MRAM with nonlinear voltage-dependent magnetic anisotropy by using short-time reverse bias method

〇Rie Matsumoto¹, Hiroshi Imamura¹ (1.AIST)

キーワード：

spintronics、MRAM、VCMA : Voltage-controlled magnetic anisotropy

A short-time reverse bias writing method for voltage-controlled magnetoresistive random access memory (VC-MRAM) is proposed. The method can reduce the write-error rate (WER) of VC-MRAM showing nonlinear voltage-dependent magnetic anisotropy. The short-time reverse bias is applied just before the switching pulse. The results show that the WER can be several orders of magnitude lower than the conventional relaxing reverse bias method when the perpendicular magnetic anisotropy cannot be eliminated by applying a switching pulse.