講演情報
[16p-W9_324-8]Epitaxial Growth of Gallium Oxide (5): Hetero-Epitaxial Growth of Ga2O3 on Si (100) Substrates
〇ArunKumar Dhasiyan1, Tomoki Takeda2, Naofumi Kato2, Naohiro Shimizu1, Osamu Oda1,2, Masaru Hori1 (1.Nagoya Univ., CLPS, 2.NU-Rei, Inc.)
キーワード：
gallium oxide、HD-ORS、heteroepitaxy
Gallium oxide (Ga2O3), with its ultra-wide bandgap and superior Baliga figure of merit relative to SiC and GaN, is a promising candidate for next-generation power devices. Although bulk Ga2O3 can be produced by the Edge-defined Film-fed Growth (EFG) method, this approach is restricted to the (001) orientation, which suffers from cleavage issues. Moreover, the material’s intrinsically low thermal conductivity limits its use in high-power applications. To mitigate this, Ga2O3 heterostructures on GaN, SiC, sapphire, and Si have been explored, with Si offering clear advantages in cost, wafer scalability, and thermal conductivity (~150 W m-1 K-1). These attributes, combined with the maturity of Si electronics, make Ga2O3 epitaxy on Si(100) an attractive yet challenging route for device integration. Here, we demonstrate successful hetero-epitaxial growth of β-Ga2O3 on Si(100) using MBE with a novel High-Density Oxygen Radical Source (HD-ORS). Growth at 300 °C on 2-inch Si(100) wafers achieved a rate of 0.45 μm/h, and subsequent annealing at 950 °C produced single-crystalline films confirmed by X-ray Laue back-scattering measurements.