[17a-M_278-1~13] CS.3 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

11:45 〜 12:00英語発表

[17a-M_278-11] Correlation of Pinch Loop, Wake-Up, and Imprint in Sub-5 nm HZO Metal-Ferroelectric-Metal Capacitor

〇(DC)Zhenhong Liu¹, Mitsuru Takenaka¹, Shinichi Takagi², Kasidit Toprasertpong¹ (1.Univ. Tokyo, 2.Teikyo Univ.)

キーワード：

ferroelectric、wake-up、imprint

Hafnia-based ferroelectric thin films have recently emerged as attractive materials enabling non-volatile memory devices with low energy consumption, fast response, and long endurance, and thus offering a viable pathway toward next-generation memory technologies. However, the mechanisms and correlations among several reliability issues remain unclear. In this work, based on the J-E behavior after initializing the woken-up Hf_0.5Zr_0.5O₂ (HZO) Metal-Ferroelectric-Metal (MFM) capacitor to a net-zero polarization state and baking for imprint, which is similar to the pristine state, we propose a model that can simultaneously describe the pinch-loop in ultra-thin film, wake-up, and imprint.