[17p-W8E_101-1~18] 13.7 化合物及びパワーデバイス・プロセス技術・評価

18:00 〜 18:15英語発表

[17p-W8E_101-17] High-Gain and Low-Noise InAlGaN/GaN HEMTs on Si for Ka-Band Communication Applications

〇(PC)Weng YouChen¹, Chee-How Lu¹, Hung-Wei Yu¹, Chun-Hao Chen¹, Hao-Chung Kuo², edward-Yi Chang¹ (1.NYCU, 2.Hon Hai)

キーワード：

GaN、HEMT、InAlGaN

In this study, quaternary In_0.04Al_0.17GaN/GaN HEMTs fabricated on Si substrates with a thin GaN channel layer were demonstrated to achieve a high transconductance (G_m) for ka-band applications. The device with a 90-nm gate length showed a high f_T and f_max around 90/166 GHz and when operationing at 28GHz Gain around 14.38 dB with low NF_min 1.36 dB. These results indicated the potential of the InAlGaN HEMT adopting a thin channel layer for high frequency applications.