講演情報
[18a-M_178-3]Synthesis and Characterization of 2D-MoS2 by Chemical Vapor Deposition (CVD) method
Yuta Watanabe1, Shio Guruge1, Takeaki Sakurai1, 〇Muhammad Monirul Islam1 (1.Tsukuba University)
キーワード：
Transition metal dichalcogenide (TMDC)、Chemical vapor deposition、Growth parameters
Atomically thin, single-layer molybdenum disulfide (MoS2) has attracted considerable attention owing to its unique electrical, optical, and mechanical properties and for potential device application including electronics and optoelectronics. In this study, we have studied the optimization of the process parameters of the one-step chemical vapor deposition (CVD) method for the growth of 2D-MoS2 films on SiO2/Si substrates. The parameters studied include reaction temperature, precursor ratio, and post-annealing conditions. All the samples showed prominent Raman active modes of MoS2: in-plane E2g mode and the out-of-plane A1g mode. The number of layers in the grown MoS2 film was calculated from the difference in the wavenumber of E2g and A1g active modes in the Raman spectra. Among the various conditions investigated, the one-step CVD process at 600oC with precursor ratio of S (250 mg) to MoO3 (5 mg) was found to be optimal, resulting crystals with a pronounced monolayer signature as confirmed by Raman spectroscopy and photoluminescence (PL) analysis. Reaction temperature above 600 o C tends to promote formation of few-layers to bulk MoS2. In addition, thermal annealing in an N2 atmosphere significantly improved the crystallinity and found to affect the structural properties including, number of layers, of the grown MoS2 films.