講演情報
[18a-PA3-13]Investigation into the Role of Zinc Acetate in Reducing Resistivity of Zinc Oxide Nanoparticle Layers
〇(M2)Anika Islam1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane Univ., 2.SNCC)
キーワード：
Thin Film Transistor、Zinc Oxide nanoparticles、Zinc Acetate
The use of semiconductor nanoparticles (NPs) for the manufacture of channel layers of thin-film transistors (TFTs) has drawn considerable interest, owing to certain advantages such as a wide selectivity of substrate materials, surface morphology, low cost, and large process area. ZnO nanoparticle-based semiconductors have immense potential in transparent electronics for its exceptional properties, such as a high chemical and thermal stability, wide band gap, large exciton binding energy (~60 meV at room temperature), non-toxicity, and low costs [1]. Our lab has previously used ZnO nanoparticles for the purpose of making TFT using lab synthesized ZnO nanoparticles via arc discharge method [2]. However, a major limitation with ZnO nanoparticle based TFT is their high resistivity. Prior approaches to mitigating this issue have included doping, thermal pressing, particle ionization, and so on. In this study, an alternate strategy to lower sheet resistance was investigated by incorporating zinc acetate (Zn-Ac) into ZnO particles. Furthermore, Ga doping of ZnO under open-air condition leads to a reduction in sheet resistance, attributed to the presence of humidity during the thermal diffusion of Ga [1]. Based on this finding, Zn-Ac was also incorporated into Ga-doped ZnO to enhance film conductivity.