講演情報
[18a-PA3-5]Study of temperature-dependent leakage current mechanisms in β-(AlxGa1-x)2O3 Schottky barrier diodes
〇Yun Jia1, Hironori Okumura1, Yui Sasaki1, Kota Nakano1, Takeaki Sakurai1 (1.Univ. of Tsukuba)
キーワード：
Ultra Wide bandgap semiconductor