ICSCRM2026
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Session Details

Poster SessionTrack 04 Point Defects and Material Properties

[Mo-P]Point Defects and Material Properties

Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-A(1st Floor)

[Mo-P-21]DFT-validated machine-learning potential for predictive SiC polytype, surface and deformation simulations

*Mohammed Hassan1, Christopher Künneth2, Alfred Kersch1 (1. Munich University of Applied Sciences (Germany), 2. University of Bayreuth (Germany))

[Mo-P-22]Defect Study of Polycrystalline SiC supporting wafer for SiC engineered substrates

Qiang Wan1, *Shengjie Yu1, Jiahao Liao1, Jiabao Liu1 (1. Hunan Dezhi New Material Co., Ltd. (China))

[Mo-P-23]Polarity-Driven Phase Transformation and Giant Stress Divergence in UV Nanosecond Laser-Irradiated 4H-SiC

*Ping-Yu Lin1, Hsiang-En Weng1, Chiao-Yang Cheng1, Yi-Chi Lee2, Yi-Chang Wu3, Zi-Hao Wang1, Yan-Kuin Su1 (1. National Cheng Kung Univ. (Taiwan), 2. Indus. Technology and Research Inst. (Taiwan), 3. GeChi Compound Semiconductor Corp. Ltd (Taiwan))

[Mo-P-24]Semi-Insulating 4H-SiC: Can V4+ Photoluminescence Be Used as a Characterization Tool for V Concentration?

*Harmke Dorien van Dijk1, Matthieu Paillet1, Marcin Zielinski2, Rafał Jakieła3, Ahmed Azmi Zahab1, Jean Roch Huntzinger1, Hervé Peyre1, Sandrine Juillaguet1, Thomas Cohen1, Olivier Briot1 (1. L2C CNRS Université de Montpellier (France), 2. Soitec S.A. (France), 3. Inst. of Physics of the Polish Academy of Sciences (Poland))
Cancelled

[Mo-P-25]Recombination-Enhanced Defect Annealing in 4H-SiC

*Orazio Samperi1, Lasse Vines1, Anders Hallén2 (1. University of Oslo (Norway), 2. KTH Royal Institute of Technology (Sweden))

[Mo-P-26]Annihilation and Local Unfaulting Inside a Triangular Double Shockley-type Stacking Fault in 4H-SiC Epitaxial layer

Soon-Ku Hong1, Moonkyong Na2, Dohyung Kim3, Hyundon Jung3, Natsuko ASANO Asano4, *shunsuke asahina4,5 (1. Chungnam National University (Japan), 2. Korea Electrotechnology Research Institute (Japan), 3. Horiba STEC Korea (Korea), 4. JEOL Ltd (Japan), 5. Tohoku University (Japan))

[Mo-P-27]Low-Temperature Cathodoluminescence Characterization of Residual Defects in High-Dose Al-Implanted 4H-SiC

*Tomoyuki Uchida1, Shinya Honda1, Ryuichi Sugie2 (1. Toray Research Center, Inc. (Japan), 2. Univ. of Ritsumeikan (Japan))

[Mo-P-87]Evaluation of Thermal Conductivity in Single-Crystal Silicon Carbide

Abdullah Khan1, *Xueping Xu1, Rajan Rengarajan1, Ilya Zwieback1, Elijah Allridge1 (1. Coherent Corp. (USA))
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