[Tu-P] Epitaxial and Thin-Film Growth | ICSCRM2026

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Poster SessionTrack 02 Epitaxial and Thin-Film Growth

[Tu-P]Epitaxial and Thin-Film Growth

Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC

Poster-A(1st Floor)

[Tu-P-13]Characterization of High Quality Thick Epitaxial SiC Wafers for High kV Applications

*Dong Seung Lee¹, Tawhid Rana¹, Kirby Schmidt¹, Srujana Prayakarao¹, Shanthi Subramanian¹ (1. Coherent Corp. (USA))

[Tu-P-14]Kinetic Modeling and Simulation of 4H-SiC Trench Growth

*Angela Garofalo^1,2, Kelly Turner³, Gerard Colston³, Vishal Shah³, Roberto Bergamaschini¹, Stefano Sanguinetti¹ (1. Univ. of Milano-Bicocca (Italy), 2. Indus. Vishay Semiconductors Italiana (Italy), 3. Univ. of Warwick (UK))

[Tu-P-15]n-p and p-n Junctions Grown in a Single Epitaxy Process

*Philip Hens¹, Michael Pfeffer¹, Johannes Koehler¹, Felix Beier², Birgit Kallinger², Jürgen Erlekampf¹ (1. AIXTRON SE (Germany), 2. Fraunhofer IISB (Germany))

[Tu-P-16]Influence of Technological Surface Structures for Super Junction Devices on 4H SiC Epitaxial Overgrowth

*Nikolas Schabert¹, Janina Engelhardt¹, Rupert Ullmann², Philip Hens², Birgit Kallinger¹, Oleg Rusch¹ (1. Inst. Fraunhofer IISB (Germany), 2. Indus. AIXTRON SE (Germany))

[Tu-P-17]Influence of Ion Implantation and Epitaxial Overgrowth on the Charge Carrier Lifetime in 4H-SiC Epilayer Stacks

*Christian Wißgott¹, Birgit Kallinger¹, Mauro Emilio Keck¹, Norman Böttcher¹ (1. Fraunhofer IISB (Germany))

[Tu-P-18]Unlocking the Polycrystalline to Monocrystalline Phase Transition in Heteroepitaxial Cubic Silicon Carbide Compound Semiconductor

*Behzad Jazizadeh¹, Maksym Myronov¹ (1. University of Warwick (UK))

[Tu-P-19]3C-SiC formation by solid state reaction of Si and C multilayers deposited on silicon substrates

Dwarakesh Sudhahar^1,2, Joachim Döll³, Marc Pezoldt⁴, Deepshikha Shekhawat¹, *Joerg Pezoldt¹ (1. TU Ilmenau (Germany), 2. Ruhr-Universität Bochum (Germany), 3. Zentrum für Mikro- und Nanotechnologien (Germany), 4. KI Keramik-Institut GmbH (Germany))

[Tu-P-20]In-situ surface preparation of various alpha-SiC surfaces for 3C-SiC growth

*Gabriel Ferro¹, Ahmed Jabbouja¹, François Cauwet¹ (1. CNRS - Lyon 1 Unversity (France))

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