Session Details
[AMD2]Advanced TFT Technology
Thu. Dec 5, 2024 9:00 AM - 10:20 AM JST
Thu. Dec 5, 2024 12:00 AM - 1:20 AM UTC
Thu. Dec 5, 2024 12:00 AM - 1:20 AM UTC
Mid-sized Hall A
Chair: Kazumasa Nomoto (Sony)
Co-Chair: Hiromi Minemawari (AIST)
Co-Chair: Hiromi Minemawari (AIST)
[AMD2-1(Invited)]Low Voltage DNTT-Based Organic TFT: Layout, Device Characteristics, and Circuit Design
*Takashi Sato1, Kunihiro Oshima1, Qin Zhaoxing1 (1. Kyoto University (Japan))
[AMD2-2(Invited)]On the Scalability of Nanosheet Oxide Semiconductor FETs
*Masaharu Kobayashi1, Kaito Hikake1, Xingyu Huang1, Sunghun Kim1, Kota Sakai1, Zhuo Li1, Tomoko Mizutani1, Takuya Saraya1, Toshiro Hiramoto1, Takanori Takahashi2, Mutsunori Uenuma2, Yukiharu Uraoka2 (1. The University of Tokyo (Japan), 2. Nara Institute of Science and Technology (Japan))
[AMD2-3]Impact of Oxygen Content in IGZO on MW of FeTFTs
*Heyoung Kang1, Seung Hee Cha1, Jae Kyeong Jeong1 (1. Hanyang University (Korea))
[AMD2-4L]Development of a 2.15-Inch Ultra High-Resolution LCD with 2527-ppi Using LTPO Technology
*Motochika Yukawa1, Akihiro Hanada1, Takuo Kaitoh1, Hajime Watakabe1, Masashi Tsubuku1 (1. Japan Display Inc. (Japan))