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Session Details

Invited & OralPlasma Science & Technologies

Plasma Science & Technologies-1

Wed. Mar 4, 2026 9:30 AM - 11:15 AM JST
Wed. Mar 4, 2026 12:30 AM - 2:15 AM UTC
Room B(N201)
Chair:Vasco Guerra(IPFN, Institute for Plasmas and Nuclear Fusion)
9:30 AM - 10:00 AM JST(12:30 AM - 1:00 AM UTC)

[04aB03I]Plasma Control for Improving Silicon Dielectric Film Properties in Plasma-Enhanced Chemical Vapor and Atomic Layer Deposition Processes

*Nobuyuki Kuboi1 (1. Sony Semiconductor Solutions Corporation (Japan))
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[04aB04O]Pulse stress effects on ferroelectric transistor reliability with plasma-treated gate dielectric

*Yen-Lun Hsieh1, Jhao-Fong Deng1, Hong-Yi Lu1, Ying-Ju Lai1, Han-Yin Liu1, Chun-Jung Su2,3, William Cheng-Yu Ma1 (1. National Sun Yat-sen University (Taiwan), 2. National Yang Ming Chiao Tung University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[04aB05O]High-power Pulsed Magnetron Reactive Sputtering with Bias to Deposit Corrosion-Resistant TiCN Hard Film

*Chen-Feng Chang1, Hsi-Chao Chen1, Ming-Ying Wu1, Che-Hao Chen1, Cheng-Yu Chiang1 (1. NYUST (Taiwan))
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[04aB06O]Effects of plasma surface treatment on ferroelectric gate stack in thin-film transistors for memory applications

*Jhao-Fong Deng1, Yen-Lun Hsieh1, Hong-Yi Lu1, Ying-Ju Lai1, Han-Yin Liu1, Chun-Jung Su2,3, William Cheng-Yu Ma1 (1. National Sun Yat-sen University (Taiwan), 2. National Yang Ming Chiao Tung University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[04aB07O]Elucidating Primary Dissociation Mechanisms of C5H2F10, a Promising Etching Gas, Using Photoelectron-Photoion Coincidence (PEPICO) Measurements

*NGUYEN TRUNG TRAN1, Hiroshi Iwayama2, Toshio Hayashi 1, Takayoshi Tsutsumi1, Kenji Ishikawa1 (1. Center for Low-temperature Plasma Science, Nagoya University (Japan), 2. UVSOR Synchrotron Facility (Japan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[04aB08O]Influence of HF Adsorption on Cryogenic Reactive Ion Etching of Silicon

*Yusuke Imai1, Shih-Nan Hsiao2, Makoto Sekine2, Takayoshi Tsutsumi2, Kenichi Inoue2, Ryutaro Suda3, Yoshihide Kihara3, Kenji Ishikawa2 (1. Nagoya University (Japan), 2. Center for Low-Temperature Plasma Sciences (Japan), 3. Tokyo Electron Miyagi Ltd. (Japan))
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