[FB] Focus Session B ~ Device Properties under Cryogenic Temperature | IWDTF2025

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Focus SessionElectrically / Physicaly Characterization

[FB]Focus Session B ~ Device Properties under Cryogenic Temperature

Fri. Nov 7, 2025 10:55 AM - 11:55 AM JST
Fri. Nov 7, 2025 1:55 AM - 2:55 AM UTC

Sendai City War Reconstruction Memorial Hall(Exhibition Hall (BF1))

Chair:Akio Ohta(Fukuoka University), Takezo Mawaki(Tohoku University)

10:55 AM - 11:25 AM JST(1:55 AM - 2:25 AM UTC)

[FB-01](invite)Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability

*Yuta Aiba¹ (1. Frontier Technology Research & Development Institute., Kioxia Corporation (Japan))

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11:25 AM - 11:55 AM JST(2:25 AM - 2:55 AM UTC)

[FB-02]Toward Stable Operation of Si Quantum Computers: Origin of Long-period Charge Fluctuations in Si Fin-type Quantum Dots

*Hiroshi Oka¹, Hidehiro Asai¹, Kimihiko Kato¹, Takumi Inaba¹, Shota Iizuka¹, Yusuke Chiashi¹, Hitoshi Yui¹, Shoko Nagano¹, Shigenori Murakami¹, Yoshihisa Iba¹, Minoru Ogura¹, Takashi Nakayama¹, Hanpei Koike¹, Hiroshi Fuketa¹, Satoshi Moriyama², Takahiro Mori¹ (1. AIST (Japan), 2. Tokyo Denki Univ. (Japan))

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