セッション詳細
[20p-C501-1~14]10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス
2023年9月20日(水) 13:30 〜 17:30
C501 (国際交流会館)
大矢 忍(東大)、 ファム ナムハイ(東工大)、 新屋 ひかり(東大)
[20p-C501-1]単結晶ダイヤモンドを用いた横型スピンバルブ素子への導電性ナノカーボンオーミック電極の成膜とスピン注入の評価
〇綿谷 敦志1、牧 謙汰1、Sreenath Mylo Valappil1、堺 研一郎2、大曲 新矢3、吉武 剛1 (1.九大総理工、2.久留米高専、3.産総研)
[20p-C501-2]Estimation of spin drift velocity and spin mobility in the absence of effective magnetic field
due to Rashba-type SOI in n-type silicon spin MOSFET
〇井上 元1、小池 勇人2、大島 諒1、安藤 裕一郎1、白石 誠司1 (1.京大院工、2.TDK株式会社)
[20p-C501-3]Low-temperature annealing effect on spin transport in lateral spin valve devices with Co-based Heusler alloys/Ge heterostructures
〇Michihiro Yamada1,2,3, Naoyuki Sugiyama4, Kazuaki Sumi5, Kenji Oki5, Kentarou Sawano6, Kohei Hamaya1,3,5 (1.CSRN, Osaka Univ., 2.JST-PRESTO, 3.OTRI, Osaka Univ., 4.Toray Research Center, 5.GSES, Osaka Univ., 6.Tokyo City Univ.)
[20p-C501-4]Influence of the Ru composition change on the spin-to-charge conversion in SrRu1-xO3 films
〇(D)Shingo Kaneta1, Yuki K. Wakabayashi2, Yoshitaka Taniyasu2, Hideki Yamamoto2, Yoshiharu Krockenberger2, Hikari Shinya1,3, Masaaki Tanaka1,3, Shinobu Ohya1,3 (1.The Univ. of Tokyo, 2.NTT-BRL, 3.CSRN, The Univ. of Tokyo)
[20p-C501-5]高次電子スピンへの高次光子空間構造のコヒーレント転写
〇明井 翔太1、佐藤 壮太1、松元 俊基1、石原 淳2、揖場 聡3、宮本 克彦1、尾松 孝茂1、森田 健1 (1.千葉大院理工、2.東北大院工、3.産総研新原理コンピューティング研究センター)
[20p-C501-6]Observation of high-mobility quantum transport and topological band structure
of α-Sn / Fe heterostructures
〇Soichiro Fukuoka1, Tomoki Hotta1, Le Duc Anh1,2,3, Takahiro Chiba4, Yohei Kota5, Masaaki Tanaka1,3 (1.EEIS, Univ. of Tokyo, 2.PRESTO, JST, 3.CSRN, Univ. of Tokyo, 4.FRIS, Tohoku Univ., 5.NIT, Fukushima Coll.)
[20p-C501-7]Superconductivity in an α-Sn thin film
〇Tomoki Hotta1, Anh Le Duc1,2, Masaaki Tanaka1,3 (1.EEIS, Univ. Tokyo, 2.PRESTO, JST, 3.CSRN, Univ. Tokyo)
[20p-C501-8]Robust spin Hall effect in non-stoichiometric topological semimetal YPtBi thin films
〇Takanori Shirokura1, Pham Nam Hai1 (1.Tokyo Tech)
[20p-C501-9]Annealing temperature effects on spin orbit torque in YPtBi topological semimetal and perpendicularly magnetized Co/Pt multilayers
〇Sho Kagami1, Takanori Shirokura1, Pham Nam Hai1 (1.Titech)
[20p-C501-10]Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory
〇(D)HOANGHUY HO1, R. Zhang1, T. Shirokura1, S. Takahashi2, Y. Hirayama2, Nam Hai Pham1 (1.Tokyo Tech., 2.Samsung Japan Corp.)
[20p-C501-11]Magnetic-field and current-direction dependence of the superconducting diode effect in superconductor Sn wires embedded in a Dirac semimetal thin film
〇Keita Ishihara1, Le Duc Anh1,2,3, Tomoki Hotta1, Masaaki Tanaka1,3 (1.Graduate School of Electrical Engineering and Information System, The University of Tokyo, 2.PRESTO, JST, 3.Center for Spintronics Research Network)
[20p-C501-12]Current direction dependent transverse signal in topological insulator/ferromagnet heterostructures
〇(M1)Yuxiang Mao1, Masamitsu Hayashi1, Masashi Kawaguchi1, Shunzhen Wang1 (1.The Univ. of Tokyo)
[20p-C501-13]Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by irradiation of focused ion beam
〇(M2)Kohdai Inagaki1, Keita Ishihara1, Tomoki Hotta1, Yuichi Seki1, Takahito Takeda1, Tatsuhiro Ishida2, Daiki Ootsuki2, Ikuto Kawasaki3, Shinichi Fujimori3, Masaaki Tanaka1,4, Anh Le Duc1,4,5, Masaki Kobayashi1,4 (1.Univ. of Tokyo, 2.Kyoto Univ, 3.JAEA, 4.CSRN, Univ. of Tokyo, 5.PRESTO)
[20p-C501-14]A Noble-Metal-Free Spintronic System with Ferromagnetic Topological Surface State of FeSi above Room Temperature
〇Tomohiro Hori1,2, Naoya Kanazawa1, Motoaki Hirayama2,3, Kohei Fujiwara4, Atsushi Tsukazaki4, Masashi Kawasaki2,3, Yoshinori Tokura2,3,5 (1.IIS, Univ. of Tokyo, 2.Dept. of Appl. Phys., Univ. of Tokyo, 3.RIKEN CEMS, 4.IMR, Tohoku Univ., 5.Tokyo college, Univ. of Tokyo)