Session Details

[21a-B203-1~11]CS.12 Code-sharing Session of 9.4 & M

Thu. Sep 21, 2023 9:00 AM - 12:00 PM JST
Thu. Sep 21, 2023 12:00 AM - 3:00 AM UTC
B203 (Civic Auditorium)
Haruhiko Udono(Ibaraki Univ.), Masahiro Nomura(Univ. of Tokyo)

[21a-B203-1]Reduction of thermal conductivity in Ge films including epitaxial Si-based nanodots/Si

〇Yu Hirata1, Ryosuke Hotta1, Takafumi Ishibe1,2, Yoshiaki Nakamura1,2 (1.Eng. Sci. Osaka Univ., 2.OTRI Osaka Univ.)

[21a-B203-2]Power Density Analysis on Planar-type Thermoelectric Harvester

〇Ryoto Yanagisawa1, Masahiro Nomura1 (1.IIS, Univ. of Tokyo)

[21a-B203-3]Optimization of Wiring Layout of CMOS Integrated Thermoelectric Device

〇Shuhei Arai1, Takeo Matsuki1,2, Takanobu Watanabe1 (1.Waseda Univ., 2.AIST)

[21a-B203-4]Impact of Metal/Semiconductor Contact Numbers in an Integrated Silicon Micro Thermoelectric generator

〇(D)Md MehdeeHasan Mahfuz1, Shuhei Arai1, Yuma Miyake1, Cao Zhi1, Takeo Matsuki2, Watanabe Takanobu1 (1.Waseda Univ., 2.AIST)

[21a-B203-5]Characterization of thermal conduction in metal wires using SEM and IR-thermography 2

〇Hiromu Hamasaki1, Takumi Mochizuki1, Hayate Suzuki1, Hiroya Ikeda1 (1.Shizuoka Univ.)

[21a-B203-6]Thermoelectric Performance Enhancement of SrTiO3 with Reduced Thermal Conductivity by Hydride Anion Substitution

〇XINYI HE1, Seiya Nomoto1, Takayoshi Katase1, Terumasa Tadano2, Toshio Kamiya1 (1.MDX ES, Tokyo Tech, 2.NIMS)

[21a-B203-7]Thermoelectric properties of sulfur-deficient colusite Cu26Ti2Sb4Ge2S32

〇Koichiro Suekuni1, Philipp Sauerschnig2, Michihiro Ohta2, Michitaka Ohtaki1 (1.Kyushu Univ., 2.AIST GZR)

[21a-B203-9]Controlling thermoelectric power factor of two-dimensional electron gas system in AlGaAs/GaAs

〇Yuto Uematsu1, Takafumi Ishibe1,2, Takaaki Mano3, Akihiro Ohtake3, Yoshiaki Nakamura1,2 (1.Osaka Univ., 2.OTRI Osaka Univ., 3.NIMS.)

[21a-B203-10]Composition ratio control of epitaxial Fe3Si film/Si for acquiring giant transverse Seebeck coefficient

〇Reona Kitaura1, Takafumi Ishibe1,2, Masaki Mizuguchi3, Yoshiaki Nakamura1,2 (1.Eng. Sci.Osaka Univ., 2.OTRI Osaka Univ., 3.IMaSS, Nagoya Univ.)

[21a-B203-11]Thermoelectric characteristics of epitaxial GeTe thin film with controlled Ge vacancy amount/Si

〇Takafumi Ishibe1,2, Nobuyasu Naruse3, Yutaka Mera3, Yuichiro Yamashita4, Yuji Ohishi5, Yoshiaki Nakamura1,2 (1.Grad. School of Eng. Sci., Osaka Univ., 2.OTRI, Osaka Univ., 3.Shiga Univ. Medical Science, 4.AIST, 5.Grad. School of Eng., Osaka Univ.)