Session Details

[18a-C301-1~9]CS.11 Code-sharing Session of 9.4 & M

Wed. Sep 18, 2024 9:00 AM - 11:30 AM JST
Wed. Sep 18, 2024 12:00 AM - 2:30 AM UTC
C301 (Hotel Nikko 30F)
Yoshiaki Nakamura(Osaka Univ.), Masato Ohnishi(Univ. of Tokyo)

[18a-C301-1]Improvement of σ/κ Ratio in Silicon Thin Film by SiGe Super-thin Film Interface and Short-period Phononic Crystal Nanostructures

〇Ryoto Yanagisawa1, Ayaka Odashima1,2, Takahiro Inoue2, Kentaro Sawano1,2, Masahiro Nomura1 (1.IIS Univ. of Tokyo, 2.Tokyo City Univ.)
Comment()

[18a-C301-2]Thermoelectric properties in epitaxial Ge films including Stranski-Krastanov Si-based nanodots

〇Arata Shibagaki1, Hirata Yu1, Ishibe Takafumi1,2, Nakamura Yoshiaki1,2 (1.Eng. Sci., Osaka Univ., 2.OTRI, Osaka Univ.)
Comment()

[18a-C301-3]Investigation of Heat Flux Sensitivity of Silicon-Large Scale Integrated Thermoelectric Device

〇(DC)Md MehdeeHasan Mahfuz1, Taisei Mito1, Tatsuya Hayashi1, Takeo Matsuki1, Takanobu Watanabe1 (1.Waseda Univ.)
Comment()

[18a-C301-4]Si-nanowire-Width-Dependent Performance of Planar Integrated Micro Thermoelectric Generator

〇Masayuki Mishima1, Takuya Miura1, Syuhei Arai1, Takeo Matsuki1, Takanobu Watanabe1 (1.waseda Univ.)
Comment()

[18a-C301-5]Effect of Se substitution on energy and FWHM of Raman active modes in Bi2Te3-xSex

〇Ruian Liu1, Miyata Masanobu1, Mikio Koyano1 (1.JAIST)
Comment()

[18a-C301-6]Thermoelectric properties of nanobulk Si-Ge thermoelectric materials with suppressed oxidation.

〇(M1)Ryogo Ishihara1, Takuma Okumura1, Keisuke Hirata1, Masaharu Matsunami1, Tsunehiro Takeuchi1 (1.Toyota Tech. Inst.)
Comment()

[18a-C301-7]Investigation of the composite effect in pelletized Ag3SnP7 composed with multiple phases

〇(DC)Taichi Nakamura1, Masanobu Miyata1, Mikio Koyano1 (1.JAIST)
Comment()

[18a-C301-8]Improvement of thermoelectric performance of Co-doped half-Heusler TiNiSn by off-stoichiometric composition

〇Kosuke Yamazaki1, Taegyun Kim1, Hiroshi Nakatsugawa1 (1.Yokohama Natl. Univ.)
Comment()

[18a-C301-9]Investigation of p-type thermoelectric properties for Mn doped β-FeSi2

〇(M2)Umar Farooq1, Sopheap Sam2, Rio Oshita1, Hiroshi Nakatsugawa1 (1.Yokohama Nat Univ, 2.Nat Inst for Mat Sci)
Comment()